2009. 6. 4 1/4 semiconductor technical data KMC6D5CN20CA common n-ch trench mosfet revision no : 0 general description this device is a dual n-channel mosfet designed for use as a bi- directional load switch, facilitated by its commom-drain configuration. it ?? s mainly suitable for li-ion battery pack. features v dss =20v, i d =6.5a. low drain to source on resistance. : r ds(on) =24.0m (max.) @ v gs =4.5v : r ds(on) =25.0m (max.) @ v gs =4.0v : r ds(on) =27.0m (max.) @ v gs =3.1v : r ds(on) =32.0m (max.) @ v gs =2.5v esd protection. super high dense cell design. maximum rating (ta=25 ) dim millimeters a a a1 a1 c b b d c e e1 tssop-8 6.40 0.20 0.65 typ. 1.2 max 0.15 max d e e1 4.40 0.10 + _ 0.28 1 + _ l l 0.50 0.20 + _ 0.25 3.0 0.10 gauge plane 14 5 8 + _ + _ note 1) surface mounted on 1 ? 1 ? fr4 board, t ?a 10sec 1 2 s d d 1 s 1 g 2 3 4 8 7 6 5 1 s 2 g 2 s 1 2 3 rg rg 4 8 pin connection (top view) 7 6 5 kmc6d5 cn20ca type name lot no. characteristic symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current dc@ta = 25 ? (note1) i d 6.5 a pulsed i dp 26 drain power dissipation @ta = 25 ? (note1) p d 1.5 w maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient(note1) r thja 83.3 /w marking
2009. 6. 4 2/4 KMC6D5CN20CA revision no : 0 electrical characteristics (ta=25 ) note2) pulse test : pulse width 300 , duty cycle 2%. characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 20 - - v drain cut-off current i dss v ds =20v, v gs =0v - - 1 a gate to source leakage current i gss v gs = 12v, v ds =0v - - 10 a gate threshold voltage v th v ds =v gs, i d =250 a 0.5 - 1.5 v drain to source on resistance r ds(on) v gs =4.5v, i d =3.0a (note2) - 21.5 24.0 m v gs =4.0v, i d =3.0a (note2) - 22.5 25.0 v gs =3.1v, i d =3.0a (note2) - 24.5 27.0 v gs =2.5v, i d =3.0a (note2) - 28.5 32.0 gate resistance r g f=1mhz - 2.5 - k forward transconductance g fs v ds =5v, i d =6.5a (note2) - 28 - s dynamic total gate charge q g v ds =10v, i d =6.5a v gs =4.0v (note2) - 4.6 - nc gate to source charge q gs - 1.0 - gate to drain charge q gd - 2.6 - turn-on delay time t d(on) v ds =10v, v gs =4.0v i d =4.0a, r g =6 (note2) - 1.0 - s turn-on rise time t r - 1.8 - turn-off delay time t d(off) - 7.0 - turn-off fall time t f - 6.0 - source to drain diode ratings source to drain diode forward voltage v sd v gs =0v, i s =1.7a (note2) - 0.8 1.2 v
2009. 6. 4 3/4 KMC6D5CN20CA revision no : 0 fig 1. i d - v ds drain to source voltage v ds (v) 0 0 0.5 1 6 30 24 18 12 0 6 30 24 18 12 1 1.5 2 2.5 3 50 10 0 40 30 20 612 030 24 18 fig 6. i s - v sd drain current i d (a) drain current i d (a) fig 4. r ds(on) - t j fig 2. r ds(on) - i d -75 -50 -25 25 50 75 175 150 125 100 0 reverse drain current i s (a) 10 100 1.0 1.2 0.8 0.1 0.6 0.4 0.2 source to drain forward voltage v sd (v) 0.8 1.0 1.2 1.4 0.4 0.6 1.6 1.8 2.0 normalized on-resistance r ds(on) drain to source on-resistance r ds(on) (m ? ) junction temperature tj ( ) c v gs =4.5,4.0,3.1v v gs =2.5v v gs =4.5v v gs =4.5v, i d =3a v gs =2.5v, i d =3a 2.0v 2.5v gate to source voltage v gs (v) 13 02 4 fig 3. i d - v gs drain current i d (a) 25 c tj=-55 c 150 c 25 c tj=-55 c 150 c gate threshold voltage v th (v) fig 5. v th - t j -75 -50 -25 1.0 0.8 0.2 0.6 0.4 1.6 1.4 1.2 050100 25 175 150 125 75 junction temperature tj ( ) c v gs = v ds, i d = 250 a
2009. 6. 4 4/4 KMC6D5CN20CA revision no : 0 gate charge q g (nc) fig8. c - v ds drain to source voltage v ds (v) 0 5 3 1 2 4 4.8 3.6 1.2 2.4 06 fig9. q g - v gs capacitance c (pf) gate to source voltage v gs (v) 0 400 1000 800 600 200 c oss c iss i d =6.5a c rss f = 1mhz 6 0 4 20 16 12 v ds = 10 v i d = 6.5 a fig10. transient thermal response curve drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area 10 -2 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 2 10 1 1ms 200 s 10ms 100ms dc v gs =4.5v single pulse t a = 25 c r ds(on) limited square wave pulse duration tw (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 normalized effective transient thermal resistance 0.02 0.01 0.1 0.2 0.05 single pulse t 1 t 2 p dm 1. duty cycle d = t 1 /t 2 2. r thja =111 c/w duty cycle = 0.5 fig7. r ds(on) - v gs 0 20 10 50 40 30 1.5 4.5 3.5 2.5 gate to source voltage v gs (v) drain to source on resistance r ds(on) (m ? ) tj=25 c tj=150 c
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